Research on Temperature Monitoring and Control Technology for SiC MOSFET

Abstract

This paper focuses on the reliability issues of silicon carbide (SiC) MOSFETs under harsh working conditions and conducts a detailed study on their junction temperature monitoring technology. The article reviews the two main methods for monitoring the junction temperature of current SiC MOSFETs: the physical contact method (such as infrared thermal imaging, direct measurement using thermocouples, fiber optic grating temperature measurement, etc.) and the electrical method based on thermosensitive electrical parameters (TSEP). The article thoroughly analyzes and compares the key characteristics of various TSEP parameters (such as threshold voltage, on-state voltage drops, body diode voltage, switching delay time, etc.), including their principles, temperature sensitivity, linearity, feasibility of online monitoring, and anti-aging ability. Through comparative analysis, the advantages and disadvantages of different TSEP methods in different application scenarios are clarified, and the future development direction of SiC MOSFET junction temperature monitoring technology is proposed. This article provides guiding recommendations for the selection and optimization of junction temperature detection methods for SiC MOSFETs.