Research and Analysis on Semiconductor Material Manufacturing Technology

Abstract

Chemical vapor deposition (CVD) technology, as one of the core processes in semiconductor manufacturing, plays an irreplaceable role in modern integrated circuit production. This report systematically reviews research advances in CVD process parameter optimization, novel metal-organic precursors development, atomic-scale CVD modeling, and machine-learning-assisted optimization methods. By delving deeply into the optimization strategies of CVD process parameters, the latest understanding of reaction mechanisms, and the development progress of new precursors, the key challenges and future development directions faced by this technology are revealed. Research shows that CVD technology has made significant breakthroughs in achieving atomic-level thickness control, three-dimensional structure coverage, and low-temperature deposition, providing important technical support for the manufacturing of advanced semiconductor devices. Through systematic comparison of different CVD variants and their applicability in next-generation semiconductor devices, this review provides specific insights into future technological developments, particularly in the areas of atomic-scale precision control and three-dimensional integration.